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"H2 high pressure annealed Y-doped ZrO2 gate dielectric with an EOT of 0.57 nm for Ge MOSFETs"
T. I. Lee, M.C. Nguyen, H. J. Ahn, M. J. Kim, E. J. Shin, W. S. Hwang, H.Y. Yu, R. Choi, and B. J. Cho,
IEEE Electron Device Letters,
40,
1350-1353,
Sep. 2019.
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