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High Quality N+/P Junction of Ge Substrate Prepared by initiated CVD Doping Process
Journal
2020 Symposia on VLSI Technology and Circuits
Author
Jae Hwan Kim, Sung Won Shin, Tae In Lee, Wan Sik Hwang, and Byung Jin Cho
Year
2020
Date
July. 2020
File
8d458742711ad6c81b01637e1c9ac74b.png (226.1K) 6회 다운로드 DATE : 2020-12-02 10:13:22
Jae Hwan Kim, Sung Won Shin, Tae In Lee, Wan Sik Hwang, and Byung Jin Cho, "High Quality N+/P Junction of Ge Substrate Prepared by initiated CVD Doping Process," 2020 Symposia on VLSI Technology and Circuits, Hawaii, USA, July. 2020.