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2023
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"Epitaxial Strain Control of HfxZr1-xO2 with Sub-nm IGZO Seed Layer Achieving EOT=0.44 nm for DRAM Cell Capacitor"
Seongho Kim, Young Keun Park, Gyu Soup Lee, Eui Joong Shin, Woon San Ko, Hi Deok Lee, Ga Won Lee, and Byung Jin Cho,
2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
June. 2023.
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