Epitaxial Strain Control of HfxZr1-xO2 with Sub-nm IGZO Seed Layer Achieving EOT=0.44 nm for DRAM Cell Capacitor
- Journal
- 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
- Year
- 2023
- File
- 성호형 VLSI_합본.png (492.6K) 9회 다운로드 DATE : 2023-11-20 16:19:51
- Link
- https://ieeexplore.ieee.org/abstract/document/10185400 1152회 연결
Seongho Kim, Young Keun Park, Gyu Soup Lee, Eui Joong Shin, Woon San Ko, Hi Deok Lee, Ga Won Lee, and Byung Jin Cho, " Epitaxial Strain Control of HfxZr1-xO2 with Sub-nm IGZO Seed Layer Achieving EOT=0.44 nm for DRAM Cell Capacitor", 2023 IEEE Symposium on VLSI Technology and Circuits, June. 2023.