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2025
3

"Bandgap-Engineered Boron Oxynitride Tunneling Layer for Reliable PLC operation of 3D V-NAND Flash Memory Devices" Dae Hyun Kang, Jaejoong Jeong, Youngkeun Park, Yungjun Kim, Dong Hun Sin, Han Mei Choi and Byung Jin Cho, 2025 IEEE International Electron Devices Meeting (IEDM), December 2025.

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2

"Backside Ferroelectric-Assisted Charge Trap Flash (BF-CTF) Device for a Wide Memory Window and Read Disturbance-Free Performance" Jaejoong Jeong, Yeeun Kim, Youngkeun Park, Jong Kyung Park, Byung Jin Cho, IEEE Electron Device Letters, August 2025.

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1

"Hydrogen-stable Top-gate Self-aligned a-IGZO TFT with Tungsten Nitride Barrier on Source/Drain" Heetae Kim , Hoseok Lee , Heesu Kim , Jungwoo Bong , Chihun Sung, Jeho Na , Bada Kim, Min Ju Kim , Keun Heo , Sung Haeng Cho and Byung Jin Cho, IEEE Electron Device Letters, November 2025.

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