Backside Ferroelectric-Assisted Charge Trap Flash (BF-CTF) Device for a Wide Memory Window and Read Disturbance-Free Performance

Journal

IEEE Electron Device Letters

Author

Jaejoong Jeong, Yeeun Kim, Youngkeun Park, Jong Kyung Park, Byung Jin Cho

Year

2025

Date

August 2025

Link

https://ieeexplore.ieee.org/abstract/document/11142279 271회 연결