H2 high pressure annealed Y-doped ZrO2 gate dielectric with an EOT of 0.57 nm for Ge MOSFETs
- Journal
- IEEE Electron Device Letters
- Vol
- 40
- Page
- 1350-1353
- Year
- 2019
T. I. Lee, M.C. Nguyen, H. J. Ahn, M. J. Kim, E. J. Shin, W. S. Hwang, H.Y. Yu, R. Choi, and B. J. Cho, "H2 high pressure annealed Y-doped ZrO2 gate dielectric with an EOT of 0.57 nm for Ge MOSFETs," IEEE Electron Device Letters, vol. 40, no. 9, pp. 1350-1353, Sep. 2019