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Capacitance Boosting by Anti-Ferroelectric Blocking Layer in Charge Trap Flash Memory Device
Journal
2020 IEEE International Electron Devices Meeting (IEDM 2020)
Author
Eui Joong Shin, Sung Won Shin, Seung Hwan Lee, Tae In Lee, Min Ju Kim, Hyun Jun Ahn, Jae Hwan Kim, Wan Sik Hwang, Jaeduk Lee, and Byung Jin Cho
Year
2020
Date
Dec. 2020

Eui Joong Shin, Sung Won Shin, Seung Hwan Lee, Tae In Lee, Min Ju Kim, Hyun Jun Ahn, Jae Hwan Kim, Wan Sik Hwang, Jaeduk Lee, and Byung Jin Cho, "Capacitance Boosting by Anti-Ferroelectric Blocking Layer in Charge Trap Flash Memory Device," IEEE International Electron Devices Meeting, December 12-18, 2020.