Bandgap-Engineered Boron Oxynitride Tunneling Layer for Reliable PLC operation of 3D V-NAND Flash Memory Devices

Journal

2025 IEEE International Electron Devices Meeting (IEDM)

Author

Dae Hyun Kang, Jaejoong Jeong, Youngkeun Park, Yungjun Kim, Dong Hun Sin, Han Mei Choi and Byung Jin Cho

Year

2025

Date

December 2025

Link

https://ieeexplore.ieee.org/abstract/document/11353681 299회 연결