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Total 22건 1 페이지

2004
22

"Charge Trapping and Breakdown Mechanism in HfAlO/TaN Gate Stack Analyzed using Carrier Separation" W. Y. Loh, B. J. Cho, M. S. Joo, M. F. Li, D. S. H. Chan, S. Mathew, and D. L. Kwong, IEEE Trans. Dev. Mat. Rel., Dec. 2004..
21

"Thermal instability of effective work function in metal/high-K stack and its material dependence" M. S. Joo, B. J. Cho, N. Balasubramanian, and D. L. Kwong, IEEE Electron Device Lett., Nov. 2004..
20

"MOS characteristics of substituted Al gate on high-K dielectric" C. S. Park, B. J. Cho, and D. L. Kwong, IEEE Electron Device Lett., Nov. 2004..
19

"Evidence and understanding of atomic layer deposited HfO2-Al2O3 laminate MIM capacitors outperforming sandwich counterparts" S. J. Ding, H. Hu, C. Zhu, M. F. Li, S. J. Kim, B. J. Cho, D. S. H. Chan, M. B. Yu, A. Y. Du, A. Chin, and D. L. Kwong, IEEE Electron Device Lett., Oct. 2004..
18

"Optical properties of SiOx nanostructured films by pulsed laser deposition at different substrate temperatures" X. Y. Chen, Y. H. Lu, Y. H. Wu, B. J. Cho, W. D. Song, and D. Y. Dai, J. Appl. Phys., Sep. 2004..
17

"MOS characteristics of synthesized HfAlON/HfO2 stack using AlN/HfO2" C. S. Park, B. J. Cho, and D. L. Kwong, IEEE Electron Device Lett., Sep. 2004..
16

"Wet etching characteristics and surface morphology evaluation of MOCVD grown HfO2 film" M.Balasubramanian, L. K. Bera, S. Mathew, N. Balasubramanian, V. Lim, M. S. Joo, and B. J. Cho, Thin Solid Films, Sep. 2004..
15

"Feasibility Study of Using Thin Aluminum Nitride Film as A Buffer Layer for Dual Metal Gate Process" C. S. Park, B. J. Cho, N. Balasubramanian, and D.-L. Kwong, Thin Solid Films, Sep. 2004..
14

"Channel mobility degradation and charge trapping in high-K/metal gate NMOSFETs" S. Mathew, L. K. Bera, N. Balasubramanian, M. S. Joo, and B. J. Cho, Thin Solid Films, Sep. 2004..
13

"Electrical Evaluation of Laser Annealed Junctions by Hall Measurements" C. H. Poon, L. S. Tan, B. J. Cho, K. T. Ng, M. Bhat, and L. Chan, Thin Solid Films, Sep. 2004..
12

"Effect of Annealing on the Composition and Structure of HfO2 and Nitrogen-Incorporated HfO2" C. C. Yeo, M. S. Joo, B. J. Cho, and S. J. Whoang, Thin Solid Films, Sep. 2004..
11

"A Novel MONOS-type Flash Memory Using a High-k HfAlO Charge Trapping Layer" Y. N. Tan, W. K. Chim, B. J. Cho, and W. K. Choi, Electrochem. and Solid-State Lett., Aug. 2004..
10

"Improvement of voltage linearity in high-K MIM capacitors using HfO2/SiO2 stacked dielectric" S. J. Kim, B. J. Cho, M. F. Li, S. J. Ding, C. Zhu, M. B. Yu, B. Narayanan, A. F. Chin, and D. L. Kwong, IEEE Electron Device Lett., Aug. 2004..
9

"Over-erase phenomenon in SONOS-type Flash memory and its minimization using a hafnium oxide charge storage layer" Y. N. Tan, W. K. Chim, B. J. Cho, and W. K. Choi, IEEE Trans. Electron Devices, Jul. 2004..
8

"RF, DC and Reliability Characteristics of Atomic Layer Deposited HfO2-Al2O3 Laminate MIM Capacitors for Si RF IC Applications" S. J. Ding, H. Hu, H. F. Lim, S. J. Kim, X. F. Yu, C. Zhu, M. F. Li, B. J. Cho, D. S. H. Chan, S. C Rustagi, M. B. Yu, A. Chin, and D.-L. Kwong, IEEE Trans. Electron Devices, Jun. 2004..

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