Surface Passivation of Germanium Using SF6 Plasma to Reduce Source/Drain Contact Resistance in Germanium n-FET
- Journal
- IEEE ELECTRON DEVICE LETTERS
- Year
- 2015
G. S. Kim. S. H. Kim, J. K. Kin, C. Shin, J. H. Park, K. C. Saraswat, B. J. Cho, and H. Y. Yu, "Surface Passivation of Germanium Using SF6 Plasma to Reduce Source/Drain Contact Resistance in Germanium n-FET," IEEE ELECTRON DEVICE LETTERS, vol. 36, no. 8, pp. 745-747, Aug. 2015.
