Dependence of Grain Size on the Performance of a Polysilicon Channel TFT for 3D NAND Flash Memory
- Journal
- Journal of Nanoscience and Nanotechnology
- Year
- 2016
S. Y. Kim, J. K. Park, W. S. Hwang, S. J. Lee, K. H. Lee, S. H. Pyi, and B. J. Cho, "Dependence of Grain Size on the Performance of a Polysilicon Channel TFT for 3D NAND Flash Memory," Journal of Nanoscience and Nanotechnology, vol. 16, no. 5, pp. 5044-5048, May. 2016.