Random Dopant Fluctuation-Induced Threshold Voltage Variation-Immune Ge FinFET with Metal-Interlayer-Semiconductor Source/Drain
- Journal
- IEEE Transactions on Electron Devices
- Year
- 2016
Changho Shin, Jeong-Kyu Kim, Gwang-Sik Kim, Hyunjae Lee, Changhwan Shin, Jong-Kook Kim, Byung Jin Cho, and Hyun-Yong Yu, "Random Dopant Fluctuation-Induced Threshold Voltage Variation-Immune Ge FinFET with Metal-Interlayer-Semiconductor Source/Drain", IEEE Transactions on Electron Devices, vol.63, no.11, pp.4167-4172, Nov, 2016