Improvement of gate dielectric integrity using O2 plasma treatment prior to atomic layer deposition on chemical vapor deposition grown graphene
- Journal
- J. Nanosci. & Nanotech.
- Year
- 2015
O. J. Sul, J. H. Bong, A. Yoon, and B. J. Cho, "Improvement of gate dielectric integrity using O2 plasma treatment prior to atomic layer deposition on chemical vapor deposition grown graphene", J. Nanosci. & Nanotech., vol. 14, pp 1-4, 2014.