The Efficacy of Metal-Interfacial Layer-Semiconductor Source/Drain Structure on Sub-10-nm n-Type Ge FinFET Performances
- Journal
- IEEE Electron Device Lett.
- Year
- 2014
Jeong-Kyu Kim, Gwang-Sik Kim, Hyohyun Nam, Changhwan Shin, Jin-Hong Park,Jong-Kook Kim, Byung Jin Cho, Krishna C. Saraswat, and Hyun-Yong Yu, "The Efficacy of Metal-Interfacial Layer-Semiconductor Source/Drain Structure on Sub-10-nm n-Type Ge FinFET Performances", IEEE Electron Device Lett., vol. 35, no. 12, pp. 1185-1187, Dec. 2014.