Reduction of charge trapping in HfO2 film on a Ge substrate by trimethylaluminum pretreatment
- Journal
- Phys. Status Solidi RRL 6
- Year
- 2012
J. J. Lee, Y. S. Shin, J. Y. Choi, H S. Kim, S. J. Hyun, S. Y. Choi, B. J. Cho, and S. H. Lee, "Reduction of charge trapping in HfO2 film on a Ge substrate by trimethylaluminum pretreatment", Phys. Status Solidi RRL 6, No. 11, pp. 439-441, Nov. 2012.
