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Physical-Gap-Channel Graphene Field Effect Transistor with High On/Off Current Ratio for Digital Logic Applications
Journal
Appl. Phys. Lett.
Author
J. H. Mun, and B. J. Cho
Year
2012
Date
Oct. 2012.

J. H. Mun, and B. J. Cho, "Physical-Gap-Channel Graphene Field Effect Transistor with High On/Off Current Ratio for Digital Logic Applications", Appl. Phys. Lett., vol. 101, pp. 143102-1-143102-4, Oct. 2012.