Journals

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Journals

Total 331건 13 페이지

2012
151

"Improvement of Charge Retention in Flash Memory Devices by Very Light Doping of Lanthanum into an Aluminum-Oxide Blocking Layer" J. K. Park, S. H. Lee, J. S. Oh, K. H. Lee, S. H. Pyi, and B. J. Cho, Appl. Phys. Express, Aug. 2012..
150

"Seeding atomic layer deposition of high-k dielectric on graphene with ultrathin poly(4-vinylphenol) layer for enhanced device performance and reliability" W. C. Shin, T. Y. Kim, O. J. Sul, and B. J. Cho, Appl. Phys. Lett., Jul. 2012..
149

"Determination of Work Function of Graphene under a Metal Electrode and Its Role in Contact Resistance" S. M. Song, J. K. Park, W. J. Seol, and B. J. Cho, Nano Letter, Aug. 2012..
148

"Direct Measurement of Adhesion Energy of Monolayer Graphene As-Grown on Copper and Its Application to Renewable Transfer Process" T. S. Yoon, W. C. Shin, T. Y. Kim, J. H. Mun, T. S. Kim, and B. J. Cho, Nano Letter, Feb. 2012..
147

"Special Theme 기고: 국내외 열전 소자 연구동향" B. J. Cho, 전기전자재료학회지, Feb. 2012..
146

"Development of a Measurement Method for the Thermal Conductivity of a Thick Film prepared by a Screen Printing Technique" Ju Hyung We, Heon Bok Lee, Sun Jin Kim, Gyung Soo Kim, Kukjoo Kim, Kyung Cheol Choi, Onejae Sul, and Byung Jin Cho, J. Electron. Mat., Jun. 2012..
145

"Identifying and quantitating defects on chemical vapor deposition grown graphene layers by selected electrochemical deposition of Au nanoparticles" H. M. So, J. H. Mun, G. S. Bang, T. Y. Kim, B. J. Cho, C. W. Ahn, Carbon Lett., Jan. 2012..
144

"Local Growth of Graphene by Ion Implantation of Carbon in a Nickel Thin Film followed by Rapid Thermal Annealing" J. H. Mun, S. K. Lim, and B. J. Cho, J. Electrochem. Soc., Apr. 2012..
2011
143

"Graphene Gate Electrode for MOS Structure-Based Electronic Devices" J. K. Park, S. M. Song, J. H. Mun, and B. J. Cho, Nano Letter, Nov. 2011..
142

"Dirac Voltage Tunability by Hf1-xLaxO Gate Dielectric Composition Modulation for Graphene Field Effect Devices" J. G. Oh, Y. S. Shin, W. C. Shin, O. J. Sul, and B. J. Cho, Appl. Phys. Lett., Nov. 2011..
141

"ANALYSIS ON SWITCHING MECHANISM OF GRAPHENE OXIDE RESISTIVE MEMORY DEVICE" S. K. Hong, J. E. Kim, S. O. Kim, and B. J. Cho, J. Appl. Phys., Aug. 2011..
140

"Lanthanum-Oxide-Doped Nitride Charge Trap Layer for a TANOS Memory Device" J. K. Park, Y. M. Park, S. H. Lee, S. K. Lim, J. S. Oh, M. S. Joo, K. Hong, and B. J. Cho, IEEE Trans. Electron Devices, Oct. 2011..
139

"Highly Air-Stable Electrical Performance of Graphene Field Effect Transistors by Interface Engineering with Amorphous Fluoropolymer" W. C. Shin, S. Seo, and B. J. Cho, Appl. Phys. Lett., Mar. 2011..
138

"Crystallized HfLaO Embedded Tetragonal ZrO2 for Dynamic Random Access Memory Capacitor Dielectrics" Y. S. Shin, K. K. Min, S. H. Lee, S. K. Lim, J. S. Oh, K. J. Lee, K. Hong, and B. J. Cho, Appl. Phys. Lett., Apr. 2011..
137

"Mechanism of Date Retention Improvement by High Temperature Annealing of Al2O3 Blocking Layer in Flash Memory Device" J. K. Park, Y. M. Park, S. H. Lee, S. K. Lim, J. S. Oh, M. S. Joo, K. Hong, and B. J. Cho, Jpn. J. Appl. Phys., Apr. 2011..

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