Improvement of Charge Retention in Flash Memory Devices by Very Light Doping of Lanthanum into an Aluminum-Oxide Blocking Layer
- Journal
- Appl. Phys. Express
- Year
- 2012
J. K. Park, S. H. Lee, J. S. Oh, K. H. Lee, S. H. Pyi, and B. J. Cho, "Improvement of Charge Retention in Flash Memory Devices by Very Light Doping of Lanthanum into an Aluminum-Oxide Blocking Layer", Appl. Phys. Express, vol. 5, pp. 081102-1~081102-3, Aug. 2012.