Mechanism of Date Retention Improvement by High Temperature Annealing of Al2O3 Blocking Layer in Flash Memory Device
- Journal
- Jpn. J. Appl. Phys.
- Year
- 2011
J. K. Park, Y. M. Park, S. H. Lee, S. K. Lim, J. S. Oh, M. S. Joo, K. Hong, and B. J. Cho, "Mechanism of Date Retention Improvement by High Temperature Annealing of Al2O3 Blocking Layer in Flash Memory Device", Jpn. J. Appl. Phys., vol. 50, no. 4, pp. 04DD07-1-04DD07-5, Apr. 2011.