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Total 331건 14 페이지

2011
136

"Thermoelectric properties of screen-printed ZnSb film" H. B. Lee, J. H. We, H. J. Yang, K. J. Kim, K. C. Choi, and B. J. Cho, Thin Solid Films,, Jan. 2011..
135

"Thin-Film Thermoelectric Module for Power Generator Applications Using a Screen-Printing Method" H. B. Lee, H. J. Yang, J. H. We, K. J. Kim, K. C. Choi, and B. J. Cho, J. Electron. Mat., Jan. 2011..
2010
134

"Graphene Oxide Thin Films for Flexible Nonvolatile Memory Applications" H. Y. Jeong, J. Y. Kim, J. W. Kim, J. O. Hwang, J. E. Kim, J. Y. Lee, T. H. Yoon, B. J. Cho, S. O. Kim, R. S. Ruoff, and S. Y. Choi, Nano Lett., Oct. 2010..
133

"Low-Voltage High-Performance Pentacene Thin-Film Transistors with Ultrathin PVP/High-k HfLaO Hybrid Gate Dielectric" W. C. Shin, H. U. Moon, S. H. Yoo, Y. Li and B. J. Cho, IEEE Electron Device Lett., Sep. 2010..
132

"Investigation Of Interaction Between Graphene And Dielectrics" S. M. Song and B. J. Cho, Nanotechnol, Jul. 2010..
131

"Cubic-Structured HfLaO for the Blocking Layer of a Charge-Trap Type Flash Memory Device" J. K. Park, Y. M. Park, M. H. Song, S. K. Lim, J. S. Oh, M. S. Joo, K. Hong, and B. J. Cho, Appl. Phys. Express, Aug. 2010..
130

"Flexible Resistive Switching Memory Device Based on Graphene Oxide" S. K. Hong, J. E. Kim, S. O. Kim, S. Y. Choi, and B. J. Cho, IEEE Electron Device Lett., Sep. 2010..
129

"Improvement of Memory Performance by High Temperature Annealing of the Al2O3 Blocking Layer in a Charge-Trap Type Flash Memory Device" J. K. Park, Y. M. Park, S. K. Lim, J. S.Oh, M. S. Joo, K. Hong, and B. J. Cho, Appl. Phys. Lett., May. 2010..
128

"Wide Memory Window In Graphene Oxide Charge Storage Nodes" S. Wang, J. Pu, D. S. H. Chan, B. J. Cho, and K. P. Loh, Appl. Phys. Lett, Apr. 2010..
127

"Structural and Compositional Dependence of Gadolinium-Aluminum Oxide for the Application of Charge-Trap-Type Non-Volatile Memory Devices" Y. M. Park, J. K. Park, M. H. Song, S. K. Lim, J. S. Oh, M. S. Joo, K. Hong, and B. J. Cho, Appl. Phys. Lett., Feb. 2010..
126

"Effect of a Surface Pre-Treatment on Graphene Growth using a SiC Substrate" J. H. Seo, B. J. Kang, J. H. Mun, S. K. Lim and B. J. Cho, Microelectron. Eng., Oct. 2010..
125

"Optical Reflectance Measurement Of Large-Scale Graphene Layers Synthesized On Nickel Thin Film By Carbon Segregation" J. H. Mun, C. Y. Hwang, S. K. Lim and B. J. Cho, Carbon, Feb. 2010..
124

"High-Performance MIM Capacitors Using HfLaO-Based Dielectrics" L. Zhang, W. He, D. S. H. Chan, and B. J. Cho, IEEE Electron Device Lett., Jan. 2010..
2009
123

"Performance in Charge-Trap Flash Memory Using Lanthanum-Based High-k Blocking Oxide" W. He, J. Pu, D. S. H. Chan, and B. J. Cho, IEEE Trans. Electron Devices, Nov. 2009..
122

"Aluminum-Doped Gadolinium Oxides as Blocking Layer for Improved Charge Retention in Charge-Trap-Type Nonvolatile Memory Devices" J. Pu, D. S. H. Chan, S. J. Kim, and B. J. Cho, IEEE Trans. Electron Devices, Nov. 2009..

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