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Demonstration of Lg ∼ 55 nm pMOSFETs With Si/Si0.25Ge0.75/Si Channels, High Ion/Ioff (> 5 × 104), and Controlled Short Channel Effects (SCEs)
Journal
IEEE Electron Device Lett
Author
S. H. Lee, P. Majhi, J. W. Oh, B. Sassman, C. Young, A. Bowonder, W. Y. Loh, K. J. Choi, B. J. Cho, H. D. Lee, P. Kirsch, H. R. Harris, W. Tsai, S. Datta, H. H. Tseng, S. K. Banerjee, and R. Jammy
Year
2008
Date
Sep. 2008.

S. H. Lee, P. Majhi, J. W. Oh, B. Sassman, C. Young, A. Bowonder, W. Y. Loh, K. J. Choi, B. J. Cho, H. D. Lee, P. Kirsch, H. R. Harris, W. Tsai, S. Datta, H. H. Tseng, S. K. Banerjee, and R. Jammy, “Demonstration of Lg ∼ 55 nm pMOSFETs With Si/Si0.25Ge0.75/Si Channels, High Ion/Ioff (> 5 × 104), and Controlled Short Channel Effects (SCEs)”, IEEE Electron Device Lett., vol. 29, no. 9, pp. 1017-1020, Sep. 2008.