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Demonstration of High-Performance PMOSFETs Using Si-SixGe1-x-Si Quantum Wells With High-κ/Metal-Gate Stacks
Journal
IEEE Electron Device Lett.
Author
P. Majhi, P. Kalra, R. Harris, K. J. Choi, D. Heh, J. Oh, D. Kelly, R. Choi, B. J. Cho, S. Banerjee, W. Tsai, H. Tseng, and R. Jammy
Year
2008
Date
Jan. 2008.

P. Majhi, P. Kalra, R. Harris, K. J. Choi, D. Heh, J. Oh, D. Kelly, R. Choi, B. J. Cho, S. Banerjee, W. Tsai, H. Tseng, and R. Jammy, “Demonstration of High-Performance PMOSFETs Using Si-SixGe1-x-Si Quantum Wells With High-κ/Metal-Gate Stacks”, IEEE Electron Device Lett., vol. 29, no. 1, pp. 99-101, Jan. 2008.