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Carbon Doped Polysilicon Floating Gate for Improved Data Retention and P/E Window of Flash Memory
Journal
IEEE Electron Device Lett.
Author
J. Pu, S. J. Kim, S. H. Lee, Y. S. Kim, S. T. Kim, K. J. Choi and B. J. Cho
Year
2008
Date
Jul. 2008.

J. Pu, S. J. Kim, S. H. Lee, Y. S. Kim, S. T. Kim, K. J. Choi and B. J. Cho, "Carbon Doped Polysilicon Floating Gate for Improved Data Retention and P/E Window of Flash Memory ", IEEE Electron Device Lett., vol. 29, no. 7, pp. 688-690, Jul. 2008.