Impact of interfacial layer control using Gd2O3 in HfO2 gate dielectric
- Journal
- Appl. Phys. Lett.
- Year
- 2007
G.K.Kalapati, Y.Tong, W.Y.Loh, H.K.Mun, and B.J.Cho, "Impact of interfacial layer control using Gd2O3 in HfO2 gate dielectric," Appl. Phys. Lett., vol. 90, p. 183510, May. 2007.
