Integration of GaAs epitaxial layer to Si-based substrate using Ge condensation and low-temperature migration enhanced epitaxy techniques
- Journal
- J. Appl. Phys.
- Year
- 2007
H.J.Oh, K.J.Choi, W.Y.Loh, T.Htoo, S.J.Chua, and B. J. Cho, "Integration of GaAs epitaxial layer to Si-based substrate using Ge condensation and low-temperature migration enhanced epitaxy techniques", J. Appl. Phys., vol. 102, no.5, pp. 054306-1-054306-6, Sep. 2007.