Journals

  • Home
  • Publication
  • Journals
P-Type Floating Gate for Retention and P/E Window Improvement of Flash Memory Devices
Journal
IEEE Trans. Electron Devices
Author
C. Shen, J. Pu,M. -F. Li, and B. J. Cho
Year
2007
Date
Aug. 2007.

C.Shen, J.Pu,M.-F.Li, and B.J.Cho, "P-Type Floating Gate for Retention and P/E Window Improvement of Flash Memory Devices", IEEE Trans. Electron Devices, vol. 54, no.8, pp.1910-1917, Aug. 2007.