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Total 331건 17 페이지

2006
91

"Hafnium Aluminum Oxide as charge storage and blocking layers in SONOS type Non-volatile memory for high speed operation" Y. N. Tan, W. K. Chim, W. K. Choi, M. S. Joo, and B. J. Cho, IEEE Trans. Electron Devices, Apr. 2006..
90

"Atomic Layer Deposited High-κ Films and Their Role in Metal-Insulator-Metal Capacitors for Si RF/Analog Integrated Circuit Applications" Chunxiang Zhu, B. J. Cho, and M. F. Li, Chemical Vapor Deposition, Mar. 2006..
2005
89

"Stoichiometry dependence of Fermi-level pinning in fully silicided (FUSI) NiSi gate on high-K dielectric" M. S. Joo, B. J. Cho, N. Balasubramanian, and D. L. Kwong, IEEE Electron Device Lett., Dec. 2005.
88

"Integrated high K (K~19) MIM capacitor with Cu/Low-K interconnects for RF application" M. B. Yu, Y. Z. Xiong, S. J. Kim, S. Balakumar, C. Zhu, M. F. Li, B. J. Cho, G. Q. Lo, N. Balasubramanian, and D. L. Kwong, IEEE Electron Device Lett., Nov. 2005..
87

"Dopant-free FUSI PtxSi metal gate for high work function and reduced Fermi-level pinning" C. S. Park and B. J. Cho, IEEE Electron Device Lett., Nov. 2005.
86

"Electron mobility enhancement using ultrathin pure Ge on Si substrate" C. C. Yeo, B. J. Cho, F. Gao, S. J. Lee, M. H. Lee, C-Y. Yu, C. W. Liu, L. J. Tang, and T. W. Lee, IEEE Electron Device Lett., Oct. 2005..
85

"Dopant loss mechanism in n+/p germanium junctions during rapid thermal annealing" C. H. Poon, L. S. Tan, B. J. Cho, and A. Y. Du, J. Electrochem. Soc., Oct. 2005..
84

"Metal-insulator-metal RF bypass capacitor using niobium oxide (Nb2O5) with HfO2/Al2O3 barriers" S. J. Kim, B. J. Cho, M. B. Yu, M. F. Li, Y. Z. Xiong, C. Zhu, A. Chin and D. L. Kwong, IEEE Electron Device Lett., Sep. 2005..
83

"Annealing and oxidation of silicon oxide films prepared by plasma-enhanced chemical vapor depositioin" X. Chen, Y. Lu, L. J. Tang, Y. H. Wu, B. J. Cho, S. J. Xu, J. R. Dong, and W. D. Song, J. Appl. Phys., Jan. 2005..
2004
82

"Charge Trapping and Breakdown Mechanism in HfAlO/TaN Gate Stack Analyzed using Carrier Separation" W. Y. Loh, B. J. Cho, M. S. Joo, M. F. Li, D. S. H. Chan, S. Mathew, and D. L. Kwong, IEEE Trans. Dev. Mat. Rel., Dec. 2004..
81

"Thermal instability of effective work function in metal/high-K stack and its material dependence" M. S. Joo, B. J. Cho, N. Balasubramanian, and D. L. Kwong, IEEE Electron Device Lett., Nov. 2004..
80

"MOS characteristics of substituted Al gate on high-K dielectric" C. S. Park, B. J. Cho, and D. L. Kwong, IEEE Electron Device Lett., Nov. 2004..
79

"Evidence and understanding of atomic layer deposited HfO2-Al2O3 laminate MIM capacitors outperforming sandwich counterparts" S. J. Ding, H. Hu, C. Zhu, M. F. Li, S. J. Kim, B. J. Cho, D. S. H. Chan, M. B. Yu, A. Y. Du, A. Chin, and D. L. Kwong, IEEE Electron Device Lett., Oct. 2004..
78

"Optical properties of SiOx nanostructured films by pulsed laser deposition at different substrate temperatures" X. Y. Chen, Y. H. Lu, Y. H. Wu, B. J. Cho, W. D. Song, and D. Y. Dai, J. Appl. Phys., Sep. 2004..
77

"MOS characteristics of synthesized HfAlON/HfO2 stack using AlN/HfO2" C. S. Park, B. J. Cho, and D. L. Kwong, IEEE Electron Device Lett., Sep. 2004..

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