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Dopant-free FUSI PtxSi metal gate for high work function and reduced Fermi-level pinning
Journal
IEEE Electron Device Lett.
Author
C. S. Park and B. J. Cho
Year
2005
Date
Nov. 2005

C. S. Park and B. J. Cho, "Dopant-free FUSI PtxSi metal gate for high work function and reduced Fermi-level pinning," IEEE Electron Device Lett., vol. 26, no. 11, pp. 796-798, Nov. 2005.