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MOS characteristics of synthesized HfAlON/HfO2 stack using AlN/HfO2
Journal
IEEE Electron Device Lett.
Author
C. S. Park, B. J. Cho, and D. L. Kwong
Year
2004
Date
Sep. 2004.

C. S. Park, B. J. Cho, and D. L. Kwong, "MOS characteristics of synthesized HfAlON/HfO2 stack using AlN/HfO2," IEEE Electron Device Lett., vol. 25, no. 9, pp. 619-621, Sep. 2004.