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Total 331건 18 페이지

2004
76

"Wet etching characteristics and surface morphology evaluation of MOCVD grown HfO2 film" M.Balasubramanian, L. K. Bera, S. Mathew, N. Balasubramanian, V. Lim, M. S. Joo, and B. J. Cho, Thin Solid Films, Sep. 2004..
75

"Feasibility Study of Using Thin Aluminum Nitride Film as A Buffer Layer for Dual Metal Gate Process" C. S. Park, B. J. Cho, N. Balasubramanian, and D.-L. Kwong, Thin Solid Films, Sep. 2004..
74

"Channel mobility degradation and charge trapping in high-K/metal gate NMOSFETs" S. Mathew, L. K. Bera, N. Balasubramanian, M. S. Joo, and B. J. Cho, Thin Solid Films, Sep. 2004..
73

"Electrical Evaluation of Laser Annealed Junctions by Hall Measurements" C. H. Poon, L. S. Tan, B. J. Cho, K. T. Ng, M. Bhat, and L. Chan, Thin Solid Films, Sep. 2004..
72

"Effect of Annealing on the Composition and Structure of HfO2 and Nitrogen-Incorporated HfO2" C. C. Yeo, M. S. Joo, B. J. Cho, and S. J. Whoang, Thin Solid Films, Sep. 2004..
71

"A Novel MONOS-type Flash Memory Using a High-k HfAlO Charge Trapping Layer" Y. N. Tan, W. K. Chim, B. J. Cho, and W. K. Choi, Electrochem. and Solid-State Lett., Aug. 2004..
70

"Improvement of voltage linearity in high-K MIM capacitors using HfO2/SiO2 stacked dielectric" S. J. Kim, B. J. Cho, M. F. Li, S. J. Ding, C. Zhu, M. B. Yu, B. Narayanan, A. F. Chin, and D. L. Kwong, IEEE Electron Device Lett., Aug. 2004..
69

"Over-erase phenomenon in SONOS-type Flash memory and its minimization using a hafnium oxide charge storage layer" Y. N. Tan, W. K. Chim, B. J. Cho, and W. K. Choi, IEEE Trans. Electron Devices, Jul. 2004..
68

"RF, DC and Reliability Characteristics of Atomic Layer Deposited HfO2-Al2O3 Laminate MIM Capacitors for Si RF IC Applications" S. J. Ding, H. Hu, H. F. Lim, S. J. Kim, X. F. Yu, C. Zhu, M. F. Li, B. J. Cho, D. S. H. Chan, S. C Rustagi, M. B. Yu, A. Chin, and D.-L. Kwong, IEEE Trans. Electron Devices, Jun. 2004..
67

"Laser annealing of silicon nanocrystal films prepared by pulsed-laser annealing of silicon nanocrystal films prepared by pulsed-laser deposition" X. Y. Chen, Y. F. Lu, Y. H. Wu, B. J. Cho, B. J. Yang, and Y. F. Liew, J. Vacuum sci. & technol. B, Jun. 2004..
66

"Thermally Stable Fully Silicided Hf-Silicide Metal Gate Electrode" C. S. Park, B. J. Cho, and D.-L. Kwong, IEEE Electron Device Lett., Jun. 2004..
65

"Effect of surface NH3 anneal on physical and electrical properties of MOCVD HfO2 films on Ge substrate" N. Wu, Q. Zhang, C. Zhu, C. C. Yeo, S. J. Whoang, D. S. H. Chan, M. F. Li, and B. J. Cho, Appl. Phys. Lett., May. 2004..
64

"Raman spectroscopy investigation on excimer laser annealing and thickness determination of nanoscale amorphous silicon" Y. P. Zeng, Y. F. Lu, Z. X. Zhen, W. X. Sun, T. Yu, L. Liu, J. N. Zeng, B. J. Cho, and C. H. Poon, Nanotechnol., May. 2004..
63

"Al2O3/Ge-On-Insulator n- and p-MOSFETs with Fully NiSi and NiGe Dual Gates" D. S. Yu, C. H. Huang, Albert Chin, C. Zhu, M. F. Li, B. J. Cho, and D. L. Kwong, IEEE Electron Device Lett., Mar. 2004..
62

"Laser annealing of silicon nanocrystal films formed by pulsed-laser deposition" C. F. Tan, X. Y. Chen, Y. F. Lu, Y. H Wu, B. J. Cho, and J. N. Zeng, J. Laser Applicat., Feb. 2004..

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