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Effect of surface NH3 anneal on physical and electrical properties of MOCVD HfO2 films on Ge substrate
Journal
Appl. Phys. Lett.
Author
N. Wu, Q. Zhang, C. Zhu, C. C. Yeo, S. J. Whoang, D. S. H. Chan, M. F. Li, and B. J. Cho
Year
2004
Date
May. 2004.

N. Wu, Q. Zhang, C. Zhu, C. C. Yeo, S. J. Whoang, D. S. H. Chan, M. F. Li, and B. J. Cho, "Effect of surface NH3 anneal on physical and electrical properties of MOCVD HfO2 films on Ge substrate," Appl. Phys. Lett., vol. 84, no. 19, pp. 3741-3743, May. 2004.