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Al2O3/Ge-On-Insulator n- and p-MOSFETs with Fully NiSi and NiGe Dual Gates
Journal
IEEE Electron Device Lett.
Author
D. S. Yu, C. H. Huang, Albert Chin, C. Zhu, M. F. Li, B. J. Cho, and D. L. Kwong
Year
2004
Date
Mar. 2004.

D. S. Yu, C. H. Huang, Albert Chin, C. Zhu, M. F. Li, B. J. Cho, and D. L. Kwong, "Al2O3/Ge-On-Insulator n- and p-MOSFETs with Fully NiSi and NiGe Dual Gates," IEEE Electron Device Lett., vol. 25, no. 3, pp. 138-140, Mar. 2004.