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Formation of Hafnium-Aluminum-oxide gate dielectric using single cocktail liquid source in MOCVD process
Journal
IEEE Trans. Electron Devices
Author
M. S. Joo, B. J. Cho, C. C. Yeo, D. S. H. Chan, S. J. Whoang, N. Balasubramanian, and D. L. Kwong
Year
2003
Date
Oct. 2003.

M. S. Joo, B. J. Cho, C. C. Yeo, D. S. H. Chan, S. J. Whoang, N. Balasubramanian, and D. L. Kwong, "Formation of Hafnium-Aluminum-oxide gate dielectric using single cocktail liquid source in MOCVD process," IEEE Trans. Electron Devices, vol. 50, no. 10, p. 2088, Oct. 2003.