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Lanthanide (Tb)-doped HfO2 for high density MIM capacitors
Journal
IEEE Electron Device Lett
Author
S. J. Kim, B. J. Cho, M. F. Li, Albert Chin, and D. L. Kwong
Year
2003
Date
Jul. 2003.

S. J. Kim, B. J. Cho, M. F. Li, Albert Chin, and D. L. Kwong, “Lanthanide (Tb)-doped HfO2 for high density MIM capacitors”, IEEE Electron Device Lett., Vo. 24, no. 7, p. 442, Jul. 2003.