Localized oxide degradation in ultra-thin gate dielectric and its statistical analysis
- Journal
- IEEE Trans. on Electron Devices
- Year
- 2003
W. Y. Loh, B. J. Cho, C. H. Ang, J. Z. Zheng, and D. L. Kwong, "Localized oxide degradation in ultra-thin gate dielectric and its statistical analysis," IEEE Trans. on Electron Devices, vol. 50, no. 4, p. 967, Apr. 2003.