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Total 331건 2 페이지

2025
316

"High-Performance Heterogeneous 3-D Sequential CFETs Using Pulsed Green Laser Annealing" Youngkeun Park, Hyeongrak Lim, Jaejoong Jeong, Joon Pyo Kim, Jongsu Baek, Minseo Song, Seong Kwang Kim, Sanghyeon Kim and Byung Jin Cho, IEEE Transactions on Electron Devices, 73, 44 - 50, December 2025.
315

"Visualization of grain boundary-mediated domain nucleation and growth in polycrystalline Pb(Zr52Ti 48)O3 ferroelectric capacitor" Batzorig Buyantogtokh, Eun Young Kim, Sheung Hun Kim, Seongmun Eom, Byung Jin Cho, Kyung Min Kim, and Seungbum Hong, APL Materials, 13, 111111, 14, November, 2025.

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314

"Hydrogen-stable Top-gate Self-aligned a-IGZO TFT with Tungsten Nitride Barrier on Source/Drain" Heetae Kim, Hoseok Lee, Heesu Kim, Jungwoo Bong, Chihun Sung, Jeho Na, Bada Kim, Min Ju Kim, Keun Heo, Sung Haeng Cho, and Byung Jin Cho, IEEE Electron Device Letters, 47, 96 - 99, November 2025.
313

"Contact/Via Failure Recovery using Nanosecond Green Laser Annealing" Jaejoong Jeong, Youngkeun Park, Yongku Baek, Semin Noh, Heetae Kim, Dongbin Kim, Kilsun Roh, Youngsu Kim, Min Ju Kim and Byung Jin Cho, IEEE Transactions on Electron Devices, 72, 6976 - 6981, October 2025.
312

"Formation of Ga2O3 and NiO Thin Films at Low Process Temperatures for PN Heterojunction Diodes" Heejoong Ryou, Sunjae Kim, Dongbin Kim, Jongsu Baek, Yu-Jin Song, Jung Han Kim, Byung Jin Cho, Hyoung Woo Kim, and Wan Sik Hwang, ACS Applied Electronic Materials, 7, 3402-3408, April 3, 2025.

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311

"Backside Ferroelectric-assisted Charge Trap Flash (BF-CTF) Device for a Wide Memory Window and Read Disturbance-Free Performance" Jaejoong Jeong, Yeeun Kim, Youngkeun Park, Jong Kyung Park, and Byung Jin Cho, IEEE Electron Device Letters, 46, 2181-2184, November 2025.
310

"Self-Aligned Nitrogen Doping via Plasma Treatment of NiO/β-Ga2O3 Heterojunction Diodes  " Dongbin Kim, Jongsu Baek, Yoonho Choi, Junghun Kim, Hyoung Woo Kim, Byung Jin Cho, Solid State Electronics, 229, 109182, June 2025.
309

"Heterogeneous 3D Sequential CFET with Strain-Engineered Ge (100) Top-Channel pMOSFET on Bulk Si (100) nMOSFET" Hyeongrak Lim, Seong Kwang Kim, Seung Woo Lee, Youngkeun Park, Jaejoong Jeong, Hojin Jeong, Jinha Lim, Dae-Myeong Geum, Jaehoon Han, Younghyun Kim, Jaeyong Jeong, Byung Jin Cho, Senior Member, IEEE, and Sanghyeon Kim*, Member, IEEE, IEEE Transactions on Electron Devices, 72, 3422, July 2025.
308

"Superior QLC Retention Enhancement of a Large Memory Window FEFET through Gate Stack Engineering" Song-Hyeon Kuk, Bong Ho Kim, Youngkeun Park, Kyul Ko, Hyeon-Seong Hwang, Byung Jin Cho, Jae-Hoon Han, Member, Sang-Hyeon Kim, IEEE Transactions on Electron Devices, 72, 3896, July 2025.
307

"Millisecond pulsed light annealing for improving performance of top-gate self-aligned a-IGZO TFT" Heetae Kim, Seohak Park, Johak Jeong, Jun-Hwe Cha, Hoseok Lee, Chihun Sung, Jeho Na, Keun Heo, Sung Haeng Cho, Sung-Yool Choi, and Byung Jin Cho, IEEE Transactions on Electron Devices, 72, 2399, May 2025.
306

"Gate Stack Engineering for Top-tier Devices in Monolithic 3D integration using Laser Annealing" Youngkeun Park, Jaejoong Jeong, Semin Noh, Dongbin Kim, Heetae Kim, Sheung Hun Kim, Dae Hyun Kang, Min Ju Kim, and Byung Jin Cho, IEEE Electron Device Letters, 46, 685-688, May, 2025.
305

"Selective Grain Size Enlargement in Contact/Via Plugs using Nanosecond Green Laser Annealing" Jaejoong Jeong, Youngkeun Park, Hwanuk Guim, Yongku Baek, Hee Tae Kim, Dongbin Kim, Hui Jae Cho, Su-hyeon Gwon, Min Ju Kim, and Byung Jin Cho, Solid State Electronics, 226, 109098, June 2025.
304

"Empirical Modeling and Performance Evaluation of Monolithic-3D Dynamic Random-Access Memory" Sangjun Hwang, Jo-Hak Jeong, Hee-Tae Kim, Jungwoo Bong, Ho-Sung Lee, Bhishma Pandit, Gyeore Lee4, Donggu Im, Sung Haeng Cho, Hyeon-Sik Jang, Byung Jin Cho, Keun Heo, IEEE Access, 13, 39466, March 2025.
303

"Improving Cell Current in 3D NAND Flash Memory with Fixed Oxide Charge" Yeeun Kim, Jaejoong Jeong, Seul Ki Hong, Byung Jin Cho, Jong Kyung Park, Solid State Electronics, 225, April 2025.
302

"Suppression of De-Trapping by Remanent Polarization in Dual-Mechanism Flash Memory" EUIJOONG SHIN, Jaejoong Jeong, Gyusoup Lee, Seongho Kim, Byung-jin Cho, Solid State Electronics, 224, February 2025.

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