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Total 22건 2 페이지

2004
7

"Laser annealing of silicon nanocrystal films prepared by pulsed-laser annealing of silicon nanocrystal films prepared by pulsed-laser deposition" X. Y. Chen, Y. F. Lu, Y. H. Wu, B. J. Cho, B. J. Yang, and Y. F. Liew, J. Vacuum sci. & technol. B, Jun. 2004..
6

"Thermally Stable Fully Silicided Hf-Silicide Metal Gate Electrode" C. S. Park, B. J. Cho, and D.-L. Kwong, IEEE Electron Device Lett., Jun. 2004..
5

"Effect of surface NH3 anneal on physical and electrical properties of MOCVD HfO2 films on Ge substrate" N. Wu, Q. Zhang, C. Zhu, C. C. Yeo, S. J. Whoang, D. S. H. Chan, M. F. Li, and B. J. Cho, Appl. Phys. Lett., May. 2004..
4

"Raman spectroscopy investigation on excimer laser annealing and thickness determination of nanoscale amorphous silicon" Y. P. Zeng, Y. F. Lu, Z. X. Zhen, W. X. Sun, T. Yu, L. Liu, J. N. Zeng, B. J. Cho, and C. H. Poon, Nanotechnol., May. 2004..
3

"Al2O3/Ge-On-Insulator n- and p-MOSFETs with Fully NiSi and NiGe Dual Gates" D. S. Yu, C. H. Huang, Albert Chin, C. Zhu, M. F. Li, B. J. Cho, and D. L. Kwong, IEEE Electron Device Lett., Mar. 2004..
2

"Laser annealing of silicon nanocrystal films formed by pulsed-laser deposition" C. F. Tan, X. Y. Chen, Y. F. Lu, Y. H Wu, B. J. Cho, and J. N. Zeng, J. Laser Applicat., Feb. 2004..
1

"Boron profile narrowing in laser processed silicon after rapid thermal anneal" C. H. Poon, L. S. Tan, B. J. Cho, A. See, and M. Bhat, J. Electrochem. Soc., Jan. 2004..

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