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Total 331건 20 페이지

2002
46

"Thermal Stability of (HfO2)x(Al2O3)1-x on Si" H. Y. Yu, N. Wu, M. F. Li, C. Zhu, B. J. Cho, D. L. Kwong, C. H. Tung, J. S. Pan, J. W. Chai, W. D. Wang, D. Z. Chi, C. H. Ang, J. Z. Zheng, Appl. Phys. Lett., Nov. 2002..
45

"A high performance MIM capacitor using HfO2 dielectrics" H. Hang, C. Zhu, Y. F. Lu, M. F. Li, B. J. Cho, and W. K. Choi, IEEE Electron Device Lett., Sep. 2002..
44

"Pattern-induced ripple structures at silicon-oxide/silicon interface by excimer laser irradiation" X. Y. Chen, Y. F. Lu, B. J. Cho, Y. P. Zeng, and Y. H. Wu, Appl. Phys. Lett., Aug. 2002..
43

"Correlation between direct tunneling leakage current degradation and interface traps in ultrathin silicon dioxides" W. Y. Loh, B. J. Cho, and M. F. Li, Appl. Phys. Lett., Jul. 2002..
42

"Energy gap and band alignment for (HfO2)x(Al2O3)1-x on (100) Si" H. Y. Yu, M. F. Li, B. J. Cho, C. C. Yeo, M. S. Joo, D. L. Kwong, J. S. Pan, C. H. Ang, and J. Z. Zheng, Appl. Phys. Lett., Jul. 2002..
41

"Impact of decoupled plasma nitridation of ultra-thin gate oxide on the performance of p-channel MOSFETs" C. M. Lek, B. J. Cho, C. H. Ang, S. S. Tan, W. Y. Loh, J. Z. Zhen, and C. Lap, Semiconduct. Sci. Technol., Jun. 2002..
40

"Investigation of quasi-breakdown mechanism through post-Quasi-Breakdown thermal annealing" W. Y. Loh, B. J. Cho, and M. F. Li, Jpn. J. Appl. Phys., May. 2002..
39

"Evolution of quasi-breakdown mechanism in thin gate oxides" W. Y. Loh, B. J. Cho, and M. F. Li, J. Appl. Phys., Apr. 2002..
38

"Suppression of nitridation-induced interface traps and hole mobility degradation by nitrogen plasma nitridation" C. H. Ang, S. S. Tan, C. M. Lek, W. Lin, Z. J. Zheng, T. Chen, and B. J. Cho, Electrochem. Solid-State Lett., Apr. 2002..
37

"Negative bias temperature instability on plasma-nitrided silicon dioxide film" C. H. Ang, C. M. Lek, S. S. Tan, B. J. Cho, T. Chen, W. Lin, and J. Z. Zhen, Jpn. J. Appl. Phys., Mar. 2002..
36

"Hot-carrier lifetime dependence on channel width and silicon recess depth in n-channel metal-oxide-semiconductor field-effect-transistors with the recessed local oxidation of silicon isolation structure" W. K. Chim, B. J. Cho, and J. M. P. Yue, Jpn. J. Appl. Phys., Jan. 2002..
2001
35

"Experimental evidence of interface-controlled mechanism of quasi-breakdown in ultra-thin gate oxide" H. Guan, B. J. Cho, M. F. Li, Z. Xu, Y. D. He, and Z. Dong, IEEE Trans. Electron Devices, May. 2001..
34

"Reliability of thin gate oxides irradiated under X-ray lithography conditions" B. J. Cho, S. J. Kim, C. H. Ang, C. H. Ling, M. S. Joo, and I. S. Yeo, Jpn. J. Appl. Phys., Apr. 2001..
2000
33

"A thorough study of quasi-breakdown phenomenon of thin gate oxide in dual-gate CMOSFET's" H. Guan, M. F. Li, Y. D. He, B. J. Cho, and Z. Dong, IEEE Trans. on Electron Devices, Vol. 47, pp. 1608, Aug. 2000.
32

"Hot-carrier degradation mechanism in narrow- and wide- channel n-MOSFET's with recessed LOCOS isolation structure" J. M. P. Yue, W. K. Chim, B. J. Cho, D. S. H. Chan, W. H. Qin, Y. B. Kim, S. A. Jang, and I. S. Yeo, IEEE Electron Device Letters, Vol. 21, pp. 130, March 2000.

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