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A thorough study of quasi-breakdown phenomenon of thin gate oxide in dual-gate CMOSFET's
Journal
IEEE Trans. on Electron Devices
Vol
Vol. 47
Page
pp. 1608
Author
H. Guan, M. F. Li, Y. D. He, B. J. Cho, and Z. Dong
Year
2000
Date
Aug. 2000

H. Guan, M. F. Li, Y. D. He, B. J. Cho, and Z. Dong, "A thorough study of quasi-breakdown phenomenon of thin gate oxide in dual-gate CMOSFET's", IEEE Trans. on Electron Devices, Vol. 47, No. 8, pp. 1608, Aug. 2000