Hot-carrier degradation mechanism in narrow- and wide- channel n-MOSFET's with recessed LOCOS isolation structure

Journal

IEEE Electron Device Letters

Vol

Vol. 21

Page

pp. 130

Author

J. M. P. Yue, W. K. Chim, B. J. Cho, D. S. H. Chan, W. H. Qin, Y. B. Kim, S. A. Jang, and I. S. Yeo

Year

2000

Date

March 2000