Annealing of Fowler-Nordheim stress-induced leakage currents in thin silicon dioxide films
- Journal
- J. Electrochem. Soc.
- Year
- 2000
C. H. Ang, C. H. Ling, Z. Y. Cheng, S. J. Kim, and B. J. Cho, "Annealing of Fowler-Nordheim stress-induced leakage currents in thin silicon dioxide films", J. Electrochem. Soc., vol. 147, no. 12, pp. 4676-4682, Dec. 2000.