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Total 331건 22 페이지

1999
16

"Role of hole fluence in gate oxide breakdown" M. F. Li, Y. D. He, S. G. Ma, B. J. Cho, K. F. Lo, and M. Z. Xu, IEEE Electron Device Lett., Nov. 1999..
15

"Conduction mechanism under quasi-breakdown of ultra-thin gate oxide" Y. D. He, H. Guan, M. F. Li, B. J. Cho, and Z. Dong, Appl. Phys. Lett., Oct. 1999..
1998
14

"Isolation process induced wafer warpage" S. A. Jang, I. S. Yeo, Y. B. Kim, and B. J. Cho, Electrochem. Solid-State Lett, Jul. 1998..
1997
13

"A mechanism of field-oxide-ungrowth phenomenon on recessed LOCOS isolation process and practical solution" S. A. Jang, Y. B. Kim, B. J. Cho, and J. C. Kim, J. Electrochem. Soc., Aug. 1997..
12

"Evaluation of double spacer local oxidation of silicon (LOCOS) isolation for sub-quarter micron design rule" S. A. Jang, Y. B. Kim, B. J. Cho, and J. C. Kim, Jpn. J. Appl. Phys., Mar. 1997..
11

"Anomalous field-oxide-ungrowth phenomenon in recessed LOCOS isolation structure" B. J. Cho, S. A. Jang, Y. B. Kim, D. D. Lee, and J. C. Kim, J. Electrochem. Soc., Jan. 1997..
1996
10

"Shallow p+ -n junction formation by Ge pre-amorphization and additional RTA" J. G. Oh, K. H. Lee, B. J. Cho, and J. C. Kim, J. Kor. Appl. Phys., Jul. 1996..
9

"Nano-trenched local oxidation of silicon isolation using island polysilicon grains" S. K. Kwon, C. Lim, B. J. Cho, and J. C. Kim, J. Electrochem. Soc, Feb. 1996..
1994
8

"Development of a hexagonal shaped rapid thermal processor using a vertical tube" B. J. Cho, P. Vandenabeele and K. Maex, IEEE Trans. Semicond. Manuf., Aug. 1994..
1992
7

"Estimation of effective diffusion time in a rapid thermal diffusion using a solid diffusion source" B. J. Cho, S. K. Park, and C. K. Kim, IEEE Trans. Electron Devices, Jan. 1992..
1990
6

"AES study of rapid thermal boron diffusion into silicon from a solid diffusion source in oxygen ambient" J. G. Kim, B. J. Cho, and C. K. Kim, J. Electrochem. Soc, Sep. 1990..
5

"Elimination of slips on silicon wafer edge in rapid thermal process by using a ring oxide" B. J. Cho and C. K. Kim, J. Appl. Phys., Jun. 1990..
4

"Characteristics of NMOS transistors with phosphorus source/drain formed by rapid thermal diffusion" B. J. Cho, J. G. Kim, and C. K. Kim, J. Kor. Inst. Telematics. Electron, Sep. 1990..
1989
3

"Rapid thermal annealing of high dose BF2 implanted silicon" B. J. Cho and C. K. Kim, J. Kor. Appl. Phys., Nov. 1989.
1988
2

"Formation of shallow phosphorus layers by rapid thermal processing using a solid diffusion source" K. T. Kim, C. K. Kim, B. J. Cho, and J. G. Kim, J. Kor. Inst. Elect. Eng., Sep. 1988..

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