Sn-doped n-type amorphous gallium oxide semiconductor with energy bandgap of 4.9 eV
- Journal
- Materials Science in Semiconductor Processing
- Vol
- 169
- Year
- 2023
Dahee Seo, Jongsu Baek, Sunjae Kim, Byung Jin Cho, Wan Sik Hwang, "Sn-doped n-type amorphous gallium oxide semiconductor with energy bandgap of 4.9 eV", Materials Science in Semiconductor Processing.
