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An 8-nm-thick Sn-doped polycrystalline β-Ga2O3 MOSFET with a "normally-off" operation
Journal
Applied Physics Letters
Vol
119 (12)
Page
122103. 1-122103. 5
Author
Youngbin Yoon, Min Ju Kim, Byung Jin Cho, Myunghun Shin, and Wan Sik Hwang
Year
2021
Date
Sep. 2021

Youngbin Yoon, Min Ju Kim, Byung Jin Cho, Myunghun Shin, and Wan Sik Hwang, "An 8-nm-thick Sn-doped polycrystalline β-Ga2O3 MOSFET with a "normally-off" operation", Applied Physics Letters, vol. 119, no. 12, pp. 122103. 1-122103. 5, Sep. 2021.