Channel Mobility Boosting in a Poly-Si Channel Using Ge Diffusion Engineering and Hydrogen Plasma Treatment
- Journal
- IEEE Electron Device Letters
- Vol
- 43 (3)
- Page
- 342-345
- Year
- 2022
Tae In Lee, Min Ju Kim, Eui Joong Shin, Gyusoup Lee, Jaejoong Jeong, Yun Hee Lee, Jung Hoon Lee, Jaeduk Lee, and Byung-Jin Cho, "Channel Mobility Boosting in a Poly-Si Channel Using Ge Diffusion Engineering and Hydrogen Plasma Treatment", IEEE Electron Device Letters, vol. 43, no. 3, pp. 342-345, Mar. 2022.