Grain Size Engineering using Amorphous-Ge/Si Stack to Enhance Channel Mobility for NAND Flash Memory
- Journal
- IEEE Transactions on Electron Devices
- Vol
- 69 (10)
- Page
- 5940-5943
- Year
- 2022
Tae In Lee, Min Ju Kim, Eui Joong Shin, Gyusoup Lee, Jaejoong Jeong, Yun Hee Lee, Jung Hoon Lee, Jaeduk Lee, and Byung Jin Cho, "Grain Size Engineering using Amorphous-Ge/Si Stack to Enhance Channel Mobility for NAND Flash Memory", IEEE Transactions on Electron Devices, vol. 69, no. 10, pp. 5940-5943, Oct. 2022.