Analysis of Fluorine Effects on Charge-Trap Flash Memory of W/TiN/Al2O3/Si3N4/SiO2/Poly-Si Gate Stack
- Journal
- Solid-State Electronics
- Vol
- 164 (2)
- Page
- 107713. 1-107713. 6
- Year
- 2020
Tae Yoon Lee, Seung Hwan Lee, Jun Woo Son, Sang Jae Lee, Jae Hoon Bong, Eui Joong Shin, Sung Ho Kim, Wan Sik Hwang, Jung Min Moon, Yang Kyu Choi, and Byung Jin Cho, "Analysis of Fluorine Effects on Charge-Trap Flash Memory of W/TiN/Al2O3/Si3N4/SiO2/Poly-Si Gate Stack", Solid-State Electronics, vol. 164, no. 2, pp. 107713. 1-107713. 6, Feb. 2020.