Ultrathin EOT (0.67 nm) High-k Dielectric on Ge MOSFET Using Y doped ZrO2 with Record-low Leakage Current
- Journal
- IEEE Electron Device Letters
- Vol
- 40 (4)
- Page
- 502-505
- Year
- 2019
Tae In Lee, Hyun Jun Ahn, Min Ju Kim, Eui Joong Shin, Seung Hwan Lee, Sung Won Shin, Wan Sik Hwang, Hyun-Young Yu, and Byung Jin Cho, "Ultrathin EOT (0.67 nm) High-k Dielectric on Ge MOSFET Using Y doped ZrO2 with Record-low Leakage Current", IEEE Electron Device Letters, vol. 40, no. 4, pp. 502-505, Apr. 2019.