Schottky barrier height modulation of metal-interlayer-semiconductor structure depending on contact surface orientation for multi-gate transistors
- Journal
- Applied Physics Letters
- Vol
- 114 (1)
- Page
- 012102. 1-012102. 5
- Year
- 2019
Gwang-Sik Kim, Tae In Lee, Byung Jin Cho, and Hyun-Yong Yu, "Schottky barrier height modulation of metal-interlayer-semiconductor structure depending on contact surface orientation for multi-gate transistors", Applied Physics Letters, vol. 114, no. 1, pp. 012102. 1-012102. 5, Jan. 2019.